Detailed investigation of Ge–Si interdiffusion in the full range of Si1−xGex(0≤x≤1) composition-Reference-Cited by-同舟云学术

Detailed investigation of Ge–Si interdiffusion in the full range of Si1−xGex(0≤x≤1) composition

Published:2008-12 Issue:11 Volume:104 Page:113524
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Gavelle Mathieu,Bazizi El Mehdi,Scheid Emmanuel,Fazzini Pier Francesco,Cristiano Fuccio,Armand Claude,Lerch Wilfried,Paul Silke,Campidelli Yves,Halimaoui Aomar

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3033378

Reference34 articles.

1. Germanium: From its discovery to SiGe devices

2. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

3. A Logic Nanotechnology Featuring Strained-Silicon

4. A novel elevated source/drain PMOSFET formed by Ge-B/Si intermixing

5. Application of silicon-germanium in the fabrication of ultra-shallow extension junctions for sub-100 nm PMOSFETs

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