Investigation of mechanisms of vacancy generation in silicon in the presence of a TiSi2 film
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365619
Reference21 articles.
1. Temperature and time dependence of B and P diffusion in Si during surface oxidation
2. Temperature and time dependence of B and P diffusion in Si during surface oxidation
3. Point defects in Si after formation of a TiSi2 film: Evidence for vacancy supersaturation and interstitial depletion
4. Point defects and dopant diffusion in silicon
5. Effect of Stress in the Deposited Silicon Nitride Films on Boron Diffusion of Silicon
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1. Enhanced Electrochemical Properties of Arrayed CN[sub x] Nanotubes Directly Grown on Ti-Buffered Silicon Substrates;Electrochemical and Solid-State Letters;2006
2. Defects in Ge+-preamorphized silicon;Journal of Applied Physics;1999-11-15
3. Modeling of diffusion and oxidation in two dimensions during silicon device processing;Bulletin of Materials Science;1999-05
4. Excess Vacancy Generation by Silicide Formation in Si;MRS Proceedings;1999
5. Characterization of Epitaxial Growth of Semiconducting Rhenium “Disilicide” Films;MRS Proceedings;1999
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