Effect of Stress in the Deposited Silicon Nitride Films on Boron Diffusion of Silicon-Reference-Cited by-同舟云学术

Effect of Stress in the Deposited Silicon Nitride Films on Boron Diffusion of Silicon

Published:1995-01-01 Issue:1 Volume:142 Page:202-206
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Osada K.¹,Zaitsu Y.¹,Matsumoto S.¹,Yoshida M.²,Arai E.³,Abe T.⁴

Affiliation:

1. Faculty of Science and Technology, Keio University, 3‐14‐1 Hiyoshi, Yokohama 223, Japan

2. Kyusyu Institute of Design, Shiobaru, Minami‐ku, Fukuoka 815, Japan

3. NTT LSI Laboratories, Morinosato Wakamiya, Atsugi‐si, Kanagawa 243‐01, Japan

4. SEH R&D Center, Shin‐Etsu Handotai Co., Ltd., 2‐13‐1 Isobe, Annaka, Gunma 379‐01, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2043867/pdf

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