High resolution x‐ray diffraction analysis of Si/GaAs superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353836
Reference14 articles.
1. Tuning AlAs-GaAs band discontinuities and the role of Si-induced local interface dipoles
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4. AlGaAs/Ge/GaAs heterojunction bipolar transistors grown by molecular beam epitaxy
5. Si as a diffusion barrier for Ge/GaAs heterojunctions
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1. Structural characterization of semi-strained layer (GaAs)1−x(Si2)x/GaAs multilayers grown by magnetron sputtering;Thin Solid Films;2002-09
2. Evidence of electronic confinement in pseudomorphic Si/GaAs superlattices;Physical Review B;1998-06-15
3. X-ray analysis of thin films and multilayers;Reports on Progress in Physics;1996-11-01
4. Lattice locations of silicon atoms in δ-doped layers in GaAs at high doping concentrations;Physical Review B;1996-09-15
5. Structural characterization of plasma-doped silicon by high resolution x-ray diffraction;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-03
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