Tuning AlAs-GaAs heterostructure properties by means of MBE-grown Si interface layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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1. The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films;Surface Science Reports;2004-05
2. Si and Be intralayers at GaAs/AlAs and GaAs/GaAs junctions: Low-temperature photoemission measurements;Physical Review B;2000-06-15
3. Interface states at semiconductor junctions;Reports on Progress in Physics;1999-01-01
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