Si and Be intralayers at GaAs/AlAs and GaAs/GaAs junctions: Low-temperature photoemission measurements
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.16060/fulltext
Reference49 articles.
1. Semiconductor Heterojunction Interfaces: Nontransitivity of Energy-band Discontiuities
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