AlAs-GaAs heterojunction engineering by means of group-IV elemental interface layers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.4528/fulltext
Reference21 articles.
1. Bandgap and Interface Engineering for Advanced Electronic and Photonic Devices
2. Controlled modification of heterojunction band lineups by diffusive intralayers
3. Doping interface dipoles: Tunable heterojunction barrier heights and band‐edge discontinuities by molecular beam epitaxy
4. Tunable barrier heights and band discontinuities via doping interface dipoles: An interface engineering technique and its device applications
5. Effective barrier height, conduction‐band offset, and the influence ofp‐type δ doping at heterojunction interfaces: The case of the InAs/GaAs interface
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