Abstract
During the last decade a powerful new approach for designing semiconductor structures with tailored electronic and optical properties, bandgap engineering, has spawned a new generation of electronic and photonic devices. Central to bandgap engineering is the notion that by spatially varying the composition and the doping of a semiconductor over distances ranging from a few microns down to ~2.5 Å (~1 monolayer), one can tailor the band structure of a material in a nearly arbitrary and continuous way. Thus semiconductor structures with new electronic and optical properties can be custom-designed for specific applications.The enabling technology which has made bandgap engineering an exciting reality with far reaching implications for science and technology is molecular beam epitaxy (MBE), pioneered by Cho and Arthur in the late 1960s.In the subsequent decade MBE demonstrated jts ability to create ultra-thin (10–100 Å) layers and atomically abrupt interfaces between two different semiconductors (heterojunctions).
Publisher
Springer Science and Business Media LLC
Subject
Physical and Theoretical Chemistry,Condensed Matter Physics,General Materials Science
Reference34 articles.
1. Modification of heterojunction band offsets by thin layers at interfaces: Role of the interface dipole
2. McKinley J.T. , Hwu Y. , Koltenbah B.E.C. , Margaritondo G. , Baroni S. , and Resta R. , J. Vac. Sci. Technol. B (in press).
3. Tuning AlAs-GaAs band discontinuities and the role of Si-induced local interface dipoles
4. Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logic
5. Band-gap engineering via graded gap, superlattice, and periodic doping structures: Applications to novel photodetectors and other devices
Cited by
37 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献