Verification of modulation mechanism of the interfacial dipole effect by changing the stacking sequence of monatomic layers in perovskite oxides
Author:
Affiliation:
1. Department of Materials Engineering, The University of Tokyo 1 , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
2. Department of Advanced Materials Science, The University of Tokyo 2 , 5-1-5 Kashiwanoha, Kashiwa-shi, Chiba 277-8561, Japan
Abstract
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0169529/18264058/235301_1_5.0169529.pdf
Reference26 articles.
1. Study of La-Induced Flat Band Voltage Shift in Metal/HfLaOx/SiO2/Si Capacitors
2. Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning
3. Origin of electric dipoles formed at high-k/SiO2 interface
4. Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces
5. Inhomogeneous barrier heights at dipole-controlled SrRuO3/Nb:SrTiO3 Schottky junctions
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