Spinodal decomposition in BxGa1−xN and BxAl1−xN alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1450261
Reference14 articles.
1. Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
2. Molecular beam epitaxy growth of boron-containing nitrides
3. Growth of AlBN solid solutions by organometallic vapor-phase epitaxy
4. A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
5. Excitonic emission of BGaN grown on (0001) 6H–SiC by metal-organic vapor-phase epitaxy
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