Control of direct band gap emission of bulk germanium by mechanical tensile strain
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3297883
Reference24 articles.
1. Direct-gap optical gain of Ge on Si at room temperature
2. Direct gap photoluminescence of n-type tensile-strained Ge-on-Si
3. Enhanced photoluminescence of heavily n-doped germanium
4. R. Soref, J. Kouvetakis, and J. Menéndez, MRS Symposia Proceedings No. 958 (Materials Research Society, Pittsburgh, 2007), p. 13.
5. Type-I Ge∕Ge1−x−ySixSny strained-layer heterostructures with a direct Ge bandgap
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