High‐speed analog and digital modulation of 1.51‐μm wavelength, three‐channel buried crescent InGaAsP lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95274
Reference7 articles.
1. Three-channel buried-crescent InGaAsP laser with 1.51 μm wavelength on semi-insulating InP
2. Microwave Circuit Models of Semiconductor Injection Lasers
3. Direct gigabit modulation of injection lasers - Structure-dependent speed limitations
4. Groove GaInAsP laser on semi-insulating InP
5. Low threshold InGaAsP/InP lasers with microcleaved mirrors suitable for monolithic integration
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1. Orientation dependent growth behaviour during hydride VPE regrowth of InP:Fe around reactive ion etched mesas;Journal of Electronic Materials;1991-08
2. Mode-Controlled Semiconductor Lasers;Springer Series in Electronics and Photonics;1990
3. Actively mode-locked semiconductor lasers;IEEE Journal of Quantum Electronics;1989-06
4. Short-pulse and high-frequency signal generation in semiconductor lasers;Journal of Lightwave Technology;1989
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