Low threshold InGaAsP/InP lasers with microcleaved mirrors suitable for monolithic integration
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93705
Reference7 articles.
1. GaAs double heterostructure lasers fabricated by wet chemical etching
2. Chemically etched-mirror GaInAsP/InP lasers - Review
3. Monolithic Ga1−xInxAs mesa lasers with grown optical facets
4. Single-wavelength operation of 1.53 μm GaInAsP/InP buried-heterostructure integrated twin-guide laser with distributed Bragg reflector under direct modulation up to 1 GHz
5. AlGaAs lasers with micro‐cleaved mirrors suitable for monolithic integration
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Cleaved Mirrors for Nitride Semiconductor Lasers;Journal of Electronic Materials;2008-06-17
2. Use of atomic force microscopy for analysis of high performance InGaAsP/InP semiconductor lasers with dry-etched facets;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05
3. InP-based lasers on Si substrates with microcleaved mirrors;Microwave and Optical Technology Letters;1994-02-20
4. InGaAsP/InP Etched Mirror Lasers Fabricated by Inclined RIE;Japanese Journal of Applied Physics;1989-10-20
5. Mirror formation by chemical etching and microcleaving of InP-based lasers;Canadian Journal of Physics;1987-08-01
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