Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers-Reference-Cited by-同舟云学术

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Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers

Published:2015-10-26 Issue:17 Volume:107 Page:171106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chow Weng W.¹,Liu Alan Y.²,Gossard Arthur C.²³,Bowers John E.²³

Affiliation:

1. Sandia National Laboratories, Albuquerque, New Mexico 87185-1086, USA

2. Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA

3. Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA

Funder

Semiconductor Research Corporation (SRC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4934838

Reference18 articles.

1. Comparison of experimental and theoretical gain-current relations in GaInP quantum well lasers

2. On the physics of semiconductor quantum dots for applications in lasers and quantum optics

3. Gain and the threshold of three-dimensional quantum-box lasers

4. Comparison of experimental and theoretical GaInP quantum well gain spectra

5. Density of states and phonon-induced relaxation of electrons in semiconductor quantum dots

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2. Comparison of linewidth narrowing in quantum-dot and quantum-well integrated III-V/SiN lasers;2022-10-28

3. Perspectives on Advances in Quantum Dot Lasers and Integration with Si Photonic Integrated Circuits;ACS Photonics;2021-08-11

4. Influence of quantum-confined device fabrication on semiconductor-laser theory;Journal of Vacuum Science & Technology A;2021-05

5. Optical self-injection stabilization of a passively mode-locked quantum dot on silicon laser;Novel In-Plane Semiconductor Lasers XIX;2020-02-24

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