A hybrid epitaxy method for InAs on GaP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1808241
Reference16 articles.
1. Incoherent interface of InAs grown directly on GaP(001)
2. Evidence for misfit dislocation-related carrier accumulation at the InAs/GaP heterointerface
3. Behavior of a new ordered structural dopant source in InAs/(001) GaP heterostructures
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3. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015
4. Liquid phase epitaxial growth of lattice mismatched InSb, GaInAs and GaInAsSb on GaAs substrates using a quaternary melt;Journal of Crystal Growth;2008-04
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