A theoretical study of InAs/InP and InAs/GaAs QDs systems: Formation mechanisms and photoluminescence characterization

Author:

Sabri Sara,Malek Rachid,Kassmi Khalil

Publisher

Elsevier BV

Subject

General Medicine

Reference73 articles.

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3. Chuang et al, Direct growth of single-crystalline III–V semiconductors on amorphous substrates;Chen;Nat. Commun.,2016

4. Features of electron gas in InAs nanowires imposed by interplay between nanowire geometry, doping and surface states;Degtyarev;Sci. Rep.,2017

5. Emerging III-V semiconductor compound materials for future high-speed and low power applications: a review and challenges;Shaikh;Int. j. innov. res. sci. technol,2017

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