Interface studies of molecular beam epitaxy (MBE) grown ZnSe–GaAs heterovalent structures
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of California, Davis, Davis, California 95616, USA
2. Department of Materials Science and Engineering, University of California, Davis, Davis, California 95616, USA
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0008780
Reference36 articles.
1. Design Guidelines for True Green LEDs and High Efficiency Photovoltaics Using ZnSe/GaAs Digital Alloys
2. Growth of ZnSe/GaAs Superlattices by Migration-Enhanced Epitaxy
3. Migration‐enhanced epitaxy growth and characterization of high quality ZnSe/GaAs superlattices
4. Tunable band offsets via control of interface atomic configuration in GaAs-on-ZnSe(001) heterovalent heterostructures
5. Electron counting model and its application to island structures on molecular-beam epitaxy grown GaAs(001) and ZnSe(001)
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1. Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase;Journal of Crystal Growth;2023-06
2. The criteria in above-bandgap photo-irradiation in molecular beam epitaxy growth of heterostructure of dissimilar growth temperature;Applied Surface Science;2021-12
3. In situ grown single crystal aluminum as a nonalloyed ohmic contact to n-ZnSe by molecular beam epitaxy;Journal of Vacuum Science & Technology B;2020-07
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