Electron counting model and its application to island structures on molecular-beam epitaxy grown GaAs(001) and ZnSe(001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.10481/fulltext
Reference18 articles.
1. Structure of GaAs(001)(2×4)−c(2×8)Determined by Scanning Tunneling Microscopy
2. The (001) surface of molecular-beam epitaxially grown GaAs studied by scanning tunneling microscopy
3. Atomic structure of GaAs(100)‐(2×1) and (2×4) reconstructed surfaces
4. Molecular-beam epitaxy growth mechanisms on GaAs(100) surfaces
5. Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substrates
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