Fermi level pinning in heavily neutron-irradiated GaN-Reference-Cited by-同舟云学术

Fermi level pinning in heavily neutron-irradiated GaN

Published:2006-11 Issue:9 Volume:100 Page:093715
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Polyakov A. Y.,Smirnov N. B.,Govorkov A. V.,Markov A. V.,Kolin N. G.,Merkurisov D. I.,Boiko V. M.,Shcherbatchev K. D.,Bublik V. T.,Voronova M. I.,Lee I-H.,Lee C. R.,Pearton S. J.,Dabirian A.,Osinsky A. V.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2361157

Reference28 articles.

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2. Summary Abstract: Failure of the common anion rule for lattice-matched heterojunctions

3. On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states

4. New and unified model for Schottky barrier and III–V insulator interface states formation

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