Doping effects on intersubband absorption in InGaAs/InAlAs multiquantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102488
Reference12 articles.
1. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
2. Fast relaxing absorptive nonlinear refraction in superlattices
3. Transient absorption spectra of a modulation‐doped Ga0.47In0.53As/Al0.48In0.52As multiple quantum well structure measured by picosecond infrared pulses
4. GaAs/AlGaAs multiquantum well infrared detector arrays using etched gratings
5. InGaAs/InAlAs multiquantum well intersubband absorption at a wavelength of λ=4.4 μm
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3. INTERSUBBAND TRANSITIONS IN DOPED AND UNDOPED QUANTUM WELL STRUCTURES OF In0.53Ga0.47As/In0.52Al0.48As;Journal of Nonlinear Optical Physics & Materials;2001-09
4. Effect of Be doping on the absorption of InGaAs/AlGaAs strained quantum-well infrared photodetectors grown by molecular-beam epitaxy;Applied Physics Letters;1999-03-15
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