Effect of Be doping on the absorption of InGaAs/AlGaAs strained quantum-well infrared photodetectors grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123619
Reference14 articles.
1. Long-wavelength 128*128 GaAs quantum well infrared photodetector arrays
2. LWIR 128*128 GaAs/AlGaAs multiple quantum well hybrid focal plane array
3. Quantum‐well infrared photodetectors
4. Infrared absorption enhancement in light‐ and heavy‐hole inverted Ga1−xInxAs/Al1−yInyAs quantum wells
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Compressively strainedp-type InGaAs/AlGaAs quantum-well infrared photodetectors;Journal of Applied Physics;2002-11-15
2. Strained GaInAsP/InP multiple quantum well structures grown by solid source molecular beam epitaxy;Journal of Crystal Growth;2002-11
3. Strained p-type InGaAs/AlGaAs multiple quantum well infrared photodetectors;SPIE Proceedings;2002-09-18
4. Characterization of GaInAsP/InP multiple quantum wells grown by solid source MBE for long wavelength infrared detection;SPIE Proceedings;2002-09-18
5. High-resolution X-ray diffraction study of strained InGaAsP/InP multiple quantum well structures grown using all solid sources;Materials Science in Semiconductor Processing;2001-12
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