Influence of H2-annealing on the hydrogen distribution near SiO2/Si(100) interfaces revealed byin situnuclear reaction analysis
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1509084
Reference23 articles.
1. Kinetics ofH2passivation ofPbcenters at the (111) Si-SiO2interface
2. Atomic hydrogen-induced degradation of the structure
3. Post‐irradiation cracking of H2and formation of interface states in irradiated metal‐oxide‐semiconductor field‐effect transistors
4. Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon
5. A quantitative investigation of hydrogen in the metal-oxide-silicon system using NRA
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