Impact of H-Uptake from Forming Gas Annealing and Ion Implantation on the Photoluminescence of Si Nanoparticles-Reference-Cited by-同舟云学术

Impact of H-Uptake from Forming Gas Annealing and Ion Implantation on the Photoluminescence of Si Nanoparticles

Published:2017-10-12 Issue:3 Volume:215 Page:1700444
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Chulapakorn Thawatchart¹^ORCID,Primetzhofer Daniel¹^ORCID,Sychugov Ilya²^ORCID,Suvanam Sethu Saveda³^ORCID,Linnros Jan²^ORCID,Hallén Anders³^ORCID

Affiliation:

1. Uppsala University, Department of Physics and Astronomy; P.O. Box 516 SE751 20 Uppsala Sweden

2. KTH-Royal Institute of Technology, Department of Materials and Nano Physics; SE164 40 Kista Sweden

3. KTH-Royal Institute of Technology, School of Information and Communication Technology; Electrum 229 SE164 40 Kista Sweden

Funder

Vetenskapsrådet

Development and Promotion of Science and Technology Talents Project

Linnaeus grant (ADOPT).

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Near-Unity Internal Quantum Efficiency of Luminescent Silicon Nanocrystals with Ligand Passivation

2. Quantum Confinement and Optical Gaps in Si Nanocrystals

3. Size dependence of the luminescence properties in Si nanocrystals

4. Quantum confinement in Si and Ge nanostructures

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