Strain-effect transistors: Theoretical study on the effects of external strain on III-nitride high-electron-mobility transistors on flexible substrates-Reference-Cited by-同舟云学术

Strain-effect transistors: Theoretical study on the effects of external strain on III-nitride high-electron-mobility transistors on flexible substrates

Published:2015-11-09 Issue:19 Volume:107 Page:193504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shervin Shahab¹²,Kim Seung-Hwan¹,Asadirad Mojtaba¹²,Ravipati Srikanth¹,Lee Keon-Hwa¹,Bulashevich Kirill³,Ryou Jae-Hyun¹²⁴

Affiliation:

1. Department of Mechanical Engineering, University of Houston, Houston, Texas 77204-4006, USA

2. Materials Science and Engineering Program, University of Houston, Houston, Texas 77204, USA

3. STR Group, Inc., Engels av. 27, P.O. Box 89, 194156, St. Petersburg, Russia

4. Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, Texas 77204, USA

Funder

Texas Center for Superconductivity Research at the University of Houston

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4935537

Reference23 articles.

1. GaN Electronics

2. High voltage operation (>80 V) of GaN bipolar junction transistors with low leakage

3. NpN-GaN/InxGa1−xN/GaN heterojunction bipolar transistor on free-standing GaN substrate

4. High performance GaN pin rectifiers grown on free-standing GaN substrates

5. GaN-Based RF Power Devices and Amplifiers

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