High density InAs∕GaAs quantum dots with enhanced photoluminescence intensity using antimony surfactant-mediated metal organic chemical vapor deposition-Reference-Cited by-同舟云学术

High density InAs∕GaAs quantum dots with enhanced photoluminescence intensity using antimony surfactant-mediated metal organic chemical vapor deposition

Published:2006-10-30 Issue:18 Volume:89 Page:183124
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Guimard Denis,Nishioka Masao,Tsukamoto Shiro,Arakawa Yasuhiko

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2385209

Reference10 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes

3. 1.24 μm InGaAs/GaAs quantum dot laser grown by metalorganic chemical vapor deposition using tertiarybutylarsine

4. Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition

5. 1.28μm lasing from stacked InAs∕GaAs quantum dots with low-temperature-grown AlGaAs cladding layer by metalorganic chemical vapor deposition

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