Coarsening process of high-density InAs quantum dots on Sb-irradiated GaAs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=4/a=045601/pdf
Reference30 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Laser Characteristics of 1.3-$\mu$m Quantum Dots Laser With High-Density Quantum Dots
3. Growth of high-density 1.06-μm InGaAs/GaAs quantum dots for high gain lasers by molecular beamepitaxy
4. Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors
5. Modulation-doped quantum dot infrared photodetectors using self-assembled InAs quantum dots
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1. Size Control and Photoluminescence Characteristics of InSb Quantum Dots on GaSb Substrates Grown by Molecular Beam Epitaxy;physica status solidi (a);2024-03-06
2. InAs/GaAsSb in-plane ultrahigh-density quantum dot lasers;Applied Physics Express;2021-11-22
3. Self-formation of InAs quantum dots on SiO x /semiconductor substrates by molecular beam deposition;Applied Physics Express;2018-07-02
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