1.28μm lasing from stacked InAs∕GaAs quantum dots with low-temperature-grown AlGaAs cladding layer by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1857075
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1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-µm P-Doped Quantum-Dot Lasers without Current Adjustments
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4. Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers
5. Comparison of radiative and structural properties of 1.3 μm InxGa(1−x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties
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3. Optical studies of InAs/GaAs quantum dot stacks for photovoltaic applications;Experimental and Theoretical NANOTECHNOLOGY;2021-05-15
4. 1.16 μm InAs/GaAs Quantum Dot Laser grown by Metal Organic Chemical Vapor Deposition;Acta Physica Polonica A;2018-08
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