p-type doping of MoS2 thin films using Nb-Reference-Cited by-同舟云学术

p-type doping of MoS2 thin films using Nb

Published:2014-03-03 Issue:9 Volume:104 Page:092104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Laskar Masihhur R.,Nath Digbijoy N.,Ma Lu,Lee Edwin W.,Lee Choong Hee,Kent Thomas,Yang Zihao,Mishra Rohan,Roldan Manuel A.,Idrobo Juan-Carlos,Pantelides Sokrates T.,Pennycook Stephen J.,Myers Roberto C.,Wu Yiying,Rajan Siddharth

Funder

NSF

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4867197

Reference25 articles.

1. Single-layer MoS2 transistors

2. Integrated Circuits and Logic Operations Based on Single-Layer MoS2

3. Electroluminescence in Single Layer MoS2

4. High-Detectivity Multilayer MoS2Phototransistors with Spectral Response from Ultraviolet to Infrared

5. High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems

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