Phase-change-assisted spin-transfer torque switching in perpendicular magnetic tunnel junctions-Reference-Cited by-同舟云学术

Phase-change-assisted spin-transfer torque switching in perpendicular magnetic tunnel junctions

Published:2021-09-20 Issue:12 Volume:119 Page:122401
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Shen¹²^ORCID,Lv Chen¹,Lin Xiaoyang¹²^ORCID,Wei Guodong¹,Xiong Yiang¹,Yang Wei¹,Wang Zhaohao¹,Zhang Youguang¹,Zhao Weisheng¹²^ORCID

Affiliation:

1. Fert Beijing Research Institute, School of Integrated Circuit Science and Engineering & Beijing Advanced Innovation Center for Big Data and Brain Computing (BDBC), Beihang University, Beijing 100191, China

2. Hefei Innovation Research Institute, Beihang University, Hefei 230013, China

Funder

National Natural Science Foundation of China

International Mobility Project

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0054491

Reference40 articles.

1. Opportunities and challenges for spintronics in the microelectronics industry

2. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

3. Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM

4. Large voltage-controlled magnetic anisotropy in the SrTiO3/Fe/Cu structure

5. Fast Low-Current Spin-Orbit-Torque Switching of Magnetic Tunnel Junctions through Atomic Modifications of the Free-Layer Interfaces

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