Fast Low-Current Spin-Orbit-Torque Switching of Magnetic Tunnel Junctions through Atomic Modifications of the Free-Layer Interfaces-Reference-Cited by-同舟云学术

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Fast Low-Current Spin-Orbit-Torque Switching of Magnetic Tunnel Junctions through Atomic Modifications of the Free-Layer Interfaces

Published:2018-01-30 Issue:1 Volume:9 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Shi Shengjie,Ou Yongxi,Aradhya S. V.,Ralph D. C.,Buhrman R. A.

Funder

Office of the Director of National Intelligence

Intelligence Advanced Research Projects Activity

National Science Foundation

Office of Naval Research

MRSEC

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.9.011002/fulltext

Reference31 articles.

1. Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer

2. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum

3. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

4. Spin transfer torque devices utilizing the giant spin Hall effect of tungsten

5. Magnetization switching by spin–orbit torque in an antiferromagnet–ferromagnet bilayer system

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