Direct evidence for photon recycling inp‐(Ga,Al)As:Si with a graded band gap
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331115
Reference11 articles.
1. Self‐excited luminescence in GaAs
2. Effect of Photon Recycling on Diffusion Length and Internal Quantum Efficiency in AlxGa1-xAs–GaAs Heterostructures
3. Effect of reabsorbed recombination radiation on photoluminescence and photoconductivity in a semi-infinite direct-gap semiconductor
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Recombination model for heterostructure interfaces;Journal of Applied Physics;1993-11
2. Photon Recycling in Double Heterostructures. I. The Case of Perfect Optical Confinement;physica status solidi (b);1986-09-01
3. Reabsorption of recombination radiation in semiconductors with high internal quantum efficiency;physica status solidi (a);1986-05-16
4. High efficiency, high modulation bandwidth (Ga,Al)As:Te,Zn light‐emitting diodes with graded band gap;Applied Physics Letters;1985-05-15
5. Reemission in direct-gap semiconductors (review);Journal of Applied Spectroscopy;1984-09
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