Effect of reabsorbed recombination radiation on photoluminescence and photoconductivity in a semi-infinite direct-gap semiconductor-Reference-Cited by-同舟云学术

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Effect of reabsorbed recombination radiation on photoluminescence and photoconductivity in a semi-infinite direct-gap semiconductor

Published:1978-09-16 Issue:1 Volume:49 Page:163-168
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Mettler K.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Spontaneous Radiative Recombination in Semiconductors

2. Dependence of Threshold Current Density and Efficiency on Fabry‐Perot Cavity Parameters: Single Heterojunction (AlGa)As–GaAs Laser Diodes

3. GaAs–AlxGa1−xAs Double Heterostructure Lasers—Effect of Doping on Lasing Characteristics of GaAs

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1. Impact of Photon Recycling, Grain Boundaries, and Nonlinear Recombination on Energy Transport in Semiconductors;ACS Photonics;2021-12-20

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3. Spatially Non-uniform Trap State Densities in Solution-Processed Hybrid Perovskite Thin Films;The Journal of Physical Chemistry Letters;2016-02-05

4. Ideal solar cell equation in the presence of photon recycling;Journal of Applied Physics;2014-11-07

5. Finite mobility effects on the radiative efficiency limit ofpn-junction solar cells;Physical Review B;2008-02-08

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