GaAs–AlxGa1−xAs Double Heterostructure Lasers—Effect of Doping on Lasing Characteristics of GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1661602
Reference20 articles.
1. GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers
2. GaAs–GaxAl1−xAs Heterostructure Injection Lasers which Exhibit Low Thresholds at Room Temperature
3. Laser Transition and Wavelength Limits of GaAs
4. Spontaneous and Stimulated Carrier Lifetime (77°K) in a High‐Purity, Surface‐Free GaAs Epitaxial Layer
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