Gallium vacancies in β-Ga2O3 crystals-Reference-Cited by-同舟云学术

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Gallium vacancies in β-Ga2O3 crystals

Published:2017-05-15 Issue:20 Volume:110 Page:202104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kananen B. E.¹,Halliburton L. E.²,Stevens K. T.³,Foundos G. K.³,Giles N. C.¹

Affiliation:

1. Department of Engineering Physics, Air Force Institute of Technology, Wright-Patterson Air Force Base, Ohio 45433, USA

2. Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26505, USA

3. Northrop Grumman Synoptics, 1201 Continental Blvd, Charlotte, North Carolina 28273, USA

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4983814

Reference23 articles.

1. Recent progress in Ga2O3power devices

2. Electronic properties of the residual donor in unintentionally doped β-Ga2O3

3. Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

4. Oxygen vacancies and donor impurities in β-Ga2O3

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1. Analysis of deep level defects in nitrogen post-deposition annealed Ga2O3/SiC hetero-structured Schottky diodes grown by mist-CVD;Applied Physics A;2024-09-10

2. On the nature of as-grown and irradiation-induced Ga vacancy defects in β-Ga2O3;Journal of Applied Physics;2024-08-13

3. Defects and doping in ultra-wide band gap (Al,Ga)N and β-(Al,Ga)2O3 alloys;Journal of Materials Research;2024-08-12

4. Correlating the electronic structures of β-Ga2O3 to its crystal tilts induced defects at nanoscale;Materials Today Physics;2024-08

5. Electron irradiation effects on the optical properties of Hf- and Zn-doped β-Ga2O3;Journal of Applied Physics;2024-05-08

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