Measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2959643
Reference20 articles.
1. Refractory silicides for integrated circuits
2. Silicides and ohmic contacts
3. Towards implementation of a nickel silicide process for CMOS technologies
4. Dopant Diffusion in Self‐Aligned Silicide/Silicon Structures
5. Silicide contacts for shallow junction devices
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1. Redistribution of phosphorus during Ni0.9Pt0.1-based silicide formation on phosphorus implanted Si substrates;Journal of Applied Physics;2018-02-28
2. The Growth of Silicides and Germanides;Handbook of Solid State Diffusion, Volume 2;2017
3. Atom probe tomography for advanced metallization;Microelectronic Engineering;2014-05
4. Progress in the understanding of Ni silicide formation for advanced MOS structures;physica status solidi (a);2014-01
5. Arsenic clustering during formation of the transient Ni silicide;Scripta Materialia;2012-07
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