Arsenic clustering during formation of the transient Ni silicide-Reference-Cited by-同舟云学术

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Arsenic clustering during formation of the transient Ni silicide

Published:2012-07 Issue:2 Volume:67 Page:169-172
ISSN:1359-6462
Container-title:Scripta Materialia
language:en
Short-container-title:Scripta Materialia

Author:

Hoummada K.,Tellouche G.,Blum I.D.,Portavoce A.,Mangelinck D.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,Mechanics of Materials,Metals and Alloys,Mechanical Engineering

Reference31 articles.

1. Silicides and ohmic contacts

2. New salicidation technology with Ni(Pt) alloy for MOSFETs

3. Implanted noble gas atoms as diffusion markers in silicide formation

4. Kinetics of formation of silicides: A review

5. Towards implementation of a nickel silicide process for CMOS technologies

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Redistribution of phosphorus during NiPtSi formation on in-situ doped Si;Microelectronic Engineering;2018-12

2. Redistribution of phosphorus during Ni0.9Pt0.1-based silicide formation on phosphorus implanted Si substrates;Journal of Applied Physics;2018-02-28

3. Reaction paths of Ni rich phases: Effect of Ni thickness;Vacuum;2017-07

4. The Growth of Silicides and Germanides;Handbook of Solid State Diffusion, Volume 2;2017

5. Texture in thin film silicides and germanides: A review;Applied Physics Reviews;2016-09

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