Microstructure characterization of Cu3Ge/n‐type GaAs ohmic contacts
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358386
Reference10 articles.
1. Characteristics of AuGeNi ohmic contacts to GaAs
2. Electron microscope studies of an alloyed Au/Ni/Au‐Ge ohmic contact to GaAs
3. Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact ton‐type GaAs
4. Non‐alloyed ohmic contact ton‐GaAs by solid phase epitaxy
5. Nonalloyed ohmic contacts ton‐GaAs by solid‐phase epitaxy of Ge
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1. Nanoscale electrical properties of epitaxial Cu3Ge film;Scientific Reports;2016-07-01
2. Fabrication of epitaxial Cu3Ge on sapphire with controlled crystallinity and planar defects;Journal of Alloys and Compounds;2015-08
3. Electrical and Microstructural Characterization of Cu-Germanide Contacts Formed on p-Type Ge Substrate;ECS Transactions;2014-08-12
4. Chemical characterization by XPS of Cu/Ge ohmic contacts to n-GaAs;Applied Surface Science;2007-03
5. Development of refractory ohmic contact materials for gallium arsenide compound semiconductors;Science and Technology of Advanced Materials;2002-01
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