Anomalous diffusion of boron implanted into silicon along the [100] direction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100092
Reference18 articles.
1. Radiation Annealing of Boron-Implanted Silicon with a Halogen Lamp
2. Rapid annealing of silicon with a scanning cw Hg lamp
3. Short Time Annealing
4. A review of rapid thermal annealing (RTA) of B, BF 2 and As ions implanted into silicon
5. Rapid thermal annealing of boron‐implanted silicon using an ultrahigh power arc lamp
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1. Fluorine-enhanced boron diffusion in germanium-preamorphized silicon;Journal of Applied Physics;2005-10
2. Boron diffusion in silicon: the anomalies and control by point defect engineering;Materials Science and Engineering: R: Reports;2003-11
3. The enhanced diffusion of boron in silicon after high-dose implantation and during rapid thermal annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04
4. Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technology;IEEE Transactions on Electron Devices;1991-02
5. Selective epitaxial growth of silicon and some potential applications;IBM Journal of Research and Development;1990-11
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