Oxygen DX center in In0.17Al0.83N: Nonradiative recombination and persistent photoconductivity
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4975934
Reference55 articles.
1. Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy
2. Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001) sapphire substrate
3. Molecular beam epitaxy of InAlN∕GaN heterostructures for high electron mobility transistors
4. Anomalous Ion Channeling inAlInN/GaNBilayers: Determination of the Strain State
5. Current status of AlInN layers lattice-matched to GaN for photonics and electronics
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1. Effects of growth temperature on structural and electrical properties of in-rich InAlN–GaN heterostructures by radio-frequency metal–organic molecular beam epitaxy;Surface Topography: Metrology and Properties;2023-04-27
2. Broad Spectrum Detector Based on AlN Crystal;Journal of Physics: Conference Series;2022-09-01
3. Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies;Journal of Applied Physics;2018-10-14
4. Defects induced broad spectral photoresponse of PVT-grown bulk AlN crystals;Scripta Materialia;2018-09
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