Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy

Published:1998-12 Issue:1-4 Volume:195 Page:309-313
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yamaguchi Shigeo,Kariya Michihiko,Nitta Shugo,Kato Hisaki,Takeuchi Tetsuya,Wetzel Christian,Amano Hiroshi,Akasaki Isamu

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Shortest wavelength semiconductor laser diode

2. High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes

3. N. Yamada, Y. Kaneko, S. Watanabe, Y. Yamaoka, T. Hidaka, S. Nakagawa, E. Marenger, T. Takeuchi, S. Yamaguchi, H. Amano, I. Akasaki, 10th IEEE/Lasers and Electro-Optics Society Annual Meet., 1997, PD1.2.

4. Calculation of unstable mixing region in wurtzite In1−x−yGaxAlyN

5. Growth of Al In1−N single crystal films by microwave-excited metalorganic vapor phase epitaxy

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