Spike annealing of boron-implanted polycrystalline-silicon on thin SiO2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1348307
Reference12 articles.
1. Thermal Budget for Fabricating p+ Polysilicon Gate with Thin Gate Oxide
2. Boron diffusion and penetration in ultrathin oxide with poly-Si gate
3. Impact of boron penetration at P/sup +/-poly/gate oxide interface on deep-submicron device reliability for dual-gate CMOS technologies
4. Oxide thickness effect on boron diffusion in thin oxide p/sup +/ Si gate technology
5. Anomalous B penetration through ultrathin gate oxides during rapid thermal annealing
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Phosphorus and boron diffusion paths in polycrystalline silicon gate of a trench-type three-dimensional metal-oxide-semiconductor field effect transistor investigated by atom probe tomography;Applied Physics Letters;2015-07-13
2. Reduction of carrier depletion in p/sup +/ polysilicon gates using laser thermal processing;IEEE Electron Device Letters;2003-05
3. Transient-enhanced diffusion in shallow-junction formation;Journal of Electronic Materials;2002-10
4. Recent developments in rapid thermal processing;Journal of Electronic Materials;2002-10
5. Implant Dose and Spike Anneal Temperature Relationships;MRS Proceedings;2001
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