Quantitative analysis of compositional changes in InGaAs∕InGaAsP quantum wells on GaAs induced by intermixing with a low temperature grown InGaP cap layer-Reference-Cited by-同舟云学术

Quantitative analysis of compositional changes in InGaAs∕InGaAsP quantum wells on GaAs induced by intermixing with a low temperature grown InGaP cap layer

Published:2006-08-07 Issue:6 Volume:89 Page:061915
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hulko O.,Thompson D. A.,Czaban J. A.,Simmons J. G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2236202

Reference12 articles.

1. Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion

2. Quantum well intermixing in InGaAsP laser structures using a low temperature grown InP cap layer

3. Depth‐dependent native‐defect‐induced layer disordering in AlxGa1−xAs‐GaAs quantum well heterostructures

4. Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs‐GaxAl1−xAs interfaces

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3. Quantitative compositional profiles of enhanced intermixing in GaAs/AlGaAs quantum well heterostructures annealed with and without a SiO2cap layer;Semiconductor Science and Technology;2009-03-10

4. Tilt generation in step-graded InxGa1−xAs metamorphic pseudosubstrate on a singular GaAs substrate using a low-temperature grown InGaP interlayer;Journal of Applied Physics;2008-05-15

5. Comparison of Quantum Well Interdiffusion on Group III, Group V, and Combined Groups III and V Sublattices in GaAs-Based Structures;IEEE Journal of Selected Topics in Quantum Electronics;2008