Improvement of structural quality of AlN layers grown on c-plane sapphire substrate by metal–organic vapor phase epitaxy using post-growth annealing with trimethylgallium

Author:

Imura Masataka1ORCID,Inaba Hideki1,Mano Takaaki1ORCID,Ishida Nobuyuki2ORCID,Uesugi Fumihiko3ORCID,Kuroda Yoko3,Nakayama Yoshiko3ORCID,Takeguchi Masaki3ORCID,Koide Yasuo1ORCID

Affiliation:

1. Research Center for Functional Materials, National Institute for Materials Science (NIMS), Namiki, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

2. Research Center for Advanced Measurement and Characterization, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

3. Transmission Electron Microscopy Analysis Station, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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