Type-II InP-based lasers emitting at 2.55 μm-Reference-Cited by-同舟云学术

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Type-II InP-based lasers emitting at 2.55 μm

Published:2012-01-23 Issue:4 Volume:100 Page:041109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sprengel Stephan,Andrejew Alexander,Vizbaras Kristijonas,Gruendl Tobias,Geiger Kathrin,Boehm Gerhard,Grasse Christian,Amann Markus-Christian

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3679378

Reference15 articles.

1. Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3μm

2. 2.33 [micro sign]m-wavelength InAs/InGaAs multiple-quantum-well lasers grown by MOVPE

3. Electrically pumped continuous-wave vertical-cavity surface-emitting lasers at ∼2.6 μm

4. Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 [micro sign]m

5. Novel approach to the calculation of instability regions in GaInAsSb alloys

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