2.33 [micro sign]m-wavelength InAs/InGaAs multiple-quantum-well lasers grown by MOVPE
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20072257?crawler=true&mimetype=application/pdf
Reference7 articles.
1. 2.05-μm wavelength InGaAs-InGaAs distributed-feedback multiquantum-well lasers with 10-mW output power
2. Surfactant-mediated growth of InGaAs multiple-quantum-well lasers emitting at 2.1μm by metalorganic vapor phase epitaxy
3. Room-temperature 2.2-μm InAs-InGaAs-InP highly strained multiquantum-well lasers grown by gas-source molecular beam epitaxy
4. Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3μm
5. Strained InAs/InP quantum well heterostructure lasers grown by low‐pressure metalorganic chemical vapor deposition
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1. 2.3-μm InAs/InGaAs distributed Bragg reflector laser grown on InP substrate with continuous tuning range of over 4 nm;Novel In-Plane Semiconductor Lasers XXIII;2024-03-13
2. Effect of Ridge Width on the Lasing Characteristics of Triangular and Rectangular InAs/In0.53Ga0.47As Quantum Well Lasers;Frontiers in Materials;2022-01-26
3. Strained-layer quantum well materials grown by MOCVD for diode laser application;Progress in Quantum Electronics;2021-01
4. Novel InP- and GaSb-based light sources for the near to far infrared;Semiconductor Science and Technology;2016-10-11
5. Structural nonlinear effects in In0.53Ga0.47As/GaAs heterostructure bipolar transistor lasers;Optik;2015-12
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