Optical studies of GaAs quantum wells strained to GaP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119198
Reference16 articles.
1. Electronic properties of strained-layer superlattices
2. An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT
3. Reduction of the threshold current of InGaAsP/lnP heterolasers by unidirectional compression
4. Confinement effects and polarization dependence of luminescence from monolayer-thick Ge quantum wells
5. Electronic structure of strained-layer AlAs/InAs (001) superlattices
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2. Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix;Physical Review B;2019-11-06
3. MOVPE‐Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications;physica status solidi (b);2018-09-21
4. Intrinsic optical confinement for ultrathin InAsN quantum well superlattices;AIP Conference Proceedings;2013
5. Atomistic calculations of Ga(NAsP)/GaP(N) quantum wells on silicon substrate: Band structure and optical gain;Applied Physics Letters;2012-03-12
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