Electronic structure of strained-layer AlAs/InAs (001) superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.2050/fulltext
Reference19 articles.
1. Strained-layer superlattices: A brief review
2. Theory of semiconductor superlattice electronic structure
3. Atomic layer molecular beam epitaxy (Almbe) of III?V compounds: Growth modes and applications
4. Structural and optical studies on molecular beam epitaxially grown (InAs)m(AlAs)m and (InAs)m(GaAs)m short-period strained layer superlattices
5. A Semi-empirical tight-binding theory of the electronic structure of semiconductors†
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2. Luminescence and energy structure of ultrathin InAs/AlAs quantum wells;physica status solidi (c);2008-02-20
3. Energy spectrum and structure of thin pseudomorphic InAs quantum wells in an AlAs matrix: Photoluminescence spectra and band-structure calculations;Physical Review B;2007-10-11
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