Structural and optical studies on molecular beam epitaxially grown (InAs)m(AlAs)m and (InAs)m(GaAs)m short-period strained layer superlattices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. A New High-Electron Mobility Monolayer Superlattice
2. Role of kinetics and thermodynamics in alloy clustering and surface quality in InAlAs grown by molecular‐beam epitaxy: Consequences for optical and transport properties
3. Electron and hole mobility in modulation doped GaInAs-AlInAs strained layer superlattice
4. Optical characterization of InGaAs‐InAlAs strained‐layer superlattices grown by molecular beam epitaxy
5. Proc. 12th Intern. Symp. on GaAs and Related Compounds;Fukui,1986
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1. Ab initio calculations of phonon spectra of (GaP) n (AlP) m superlattices;Semiconductors;2008-09-30
2. Multiple quantum wells consisting of InAs/GaAs short-period strained-layer superlattice wells for 1.3–1.55 μm photonic applications;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-05
3. Selective n- and p-type C-doping in Ga0.47In0.53As superlattices;Journal of Crystal Growth;1993-02
4. Characterization by Raman scattering, x‐ray diffraction, and transmission electron microscopy of (AlAs)m(InAs)mshort period superlattices grown by migration enhanced epitaxy;Journal of Applied Physics;1992-07
5. Structural analysis of InAs/GaAs strained-layer superlattices grown by migration enhanced epitaxy;Semiconductor Science and Technology;1991-11-01
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