Characterization by Raman scattering, x‐ray diffraction, and transmission electron microscopy of (AlAs)m(InAs)mshort period superlattices grown by migration enhanced epitaxy-Reference-Cited by-同舟云学术

Characterization by Raman scattering, x‐ray diffraction, and transmission electron microscopy of (AlAs)m(InAs)mshort period superlattices grown by migration enhanced epitaxy

Published:1992-07 Issue:1 Volume:72 Page:308-310
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bradshaw J.,Song X. J.,Shealy J. R.,Zhu J. G.,O/stergaard H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.352139

Reference18 articles.

1. A New High-Electron Mobility Monolayer Superlattice

2. Role of kinetics and thermodynamics in alloy clustering and surface quality in InAlAs grown by molecular‐beam epitaxy: Consequences for optical and transport properties

3. DC and microwave characteristics of an In0.53Ga0.47As/In0.52Al0.48As modulation-doped quasi-MISFET

4. Microwave performance of InAlAs/InGaAs/InP MODFET's

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