Migration-Enhanced Epitaxial Growth of InAs/GaAs Short-Period Superlattices for THz Generation

Author:

Chen Ruolin12,Li Xuefei3,Du Hao12,Yan Jianfeng4,Kong Chongtao5,Liu Guipeng6,Lu Guangjun12,Zhang Xin5ORCID,Song Shuxiang12,Zhang Xinhui5ORCID,Liu Linsheng12ORCID

Affiliation:

1. Guangxi Key Laboratory of Brain-Inspired Computing and Intelligent Chips, School of Electronic and Information Engineering, Guangxi Normal University, Guilin 541004, China

2. Key Laboratory of Integrated Circuits and Microsystems, Education Department of Guangxi Zhuang Autonomous Region, School of Integrated Circuits, Guangxi Normal University, Guilin 541004, China

3. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

4. Sino Nitride Semiconductor Co., Ltd., Dongguan 523000, China

5. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

6. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China

Abstract

The low-temperature-grown InGaAs (LT-InGaAs) photoconductive antenna has received great attention for the development of highly compact and integrated cheap THz sources. However, the performance of the LT-InGaAs photoconductive antenna is limited by its low resistivity and mobility. The generated radiated power is much weaker compared to the low-temperature-grown GaAs-based photoconductive antennas. This is mainly caused by the low abundance of excess As in LT-InGaAs with the conventional growth mode, which inevitably gives rise to the formation of As precipitate and alloy scattering after annealing. In this paper, the migration-enhanced molecular beam epitaxy technique is developed to grow high-quality (InAs)m/(GaAs)n short-period superlattices with a sharp interface instead of InGaAs on InP substrate. The improved electron mobility and resistivity at room temperature (RT) are found to be 843 cm2/(V·s) and 1648 ohm/sq, respectively, for the (InAs)m/(GaAs)n short-period superlattice. The band-edge photo-excited carrier lifetime is determined to be ~1.2 ps at RT. The calculated photocurrent intensity, obtained by solving the Maxwell wave equation and the coupled drift–diffusion/Poisson equation using the finite element method, is in good agreement with previously reported results. This work may provide a new approach for the material growth towards high-performance THz photoconductive antennas with high radiation power.

Funder

National Natural Science Foundation of China

the Science and Technology Base and Talent Special Project of Guangxi

Guilin Innovation Platform and Talent Plan

the Strategic Priority Research Program of the Chinese Academy of Sciences

the University-Enterprise Cooperation Program of School of Electronic Information and Modern Industry, Guangxi Normal University

Publisher

MDPI AG

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